Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors.
نویسندگان
چکیده
We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.
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ورودعنوان ژورنال:
- Physical chemistry chemical physics : PCCP
دوره 15 8 شماره
صفحات -
تاریخ انتشار 2013